VHDL-AMS Design of a MOST Model Including Deep Submicron and Thermal-Electronic Effects
نویسندگان
چکیده
The paper presents an application of the VHDL-AMS formalism to the model of a n-MOS transistor named EKV. Our model takes into account several new features specific to deep submicron technology (parasitic resistors and overlap capacitors induced by LDD), and thermalelectronic interactions. We then give some examples of application of this innovative EKV MOS model (inverter, thermal-opto-electronic coupling).
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